2SK3666-4-TB-E

2SK3666-4-TB-E

Data Sheet

Attribute
Description
Manufacturer Part Number
2SK3666-4-TB-E
Manufacturer
Description
Junction Field Effect Transistors, 30V, 200mW
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain to Source Voltage (Vdss) 30V
Current - Drain (Idss) @ Vds 2.5mA @ 10V
Current Drain (Id) 10mA
Voltage - Cutoff (VGS off) @ Id 180mV @ 1µA
Power - Max 200mW
Input Capacitance (Ciss) @ Vds 4pF @ 10V
Resistance - RDS(On) 200 Ohm
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current N-Channel for LED or diode evaluation. Peak Rds(on) at Id 180mV @ 1µA for MOSFET efficiency.

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