2N5639G

2N5639G
Attribute
Description
Manufacturer Part Number
2N5639G
Manufacturer
Description
Junction Field Effect Transistors, 35V, 310mW
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 35V
Drain to Source Voltage (Vdss) 30V
Current - Drain (Idss) @ Vds 25mA @ 20V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id -
Power - Max 310mW
Input Capacitance (Ciss) @ Vds 10pF @ 12V (VGS)
Resistance - RDS(On) 60 Ohm
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)

Description

Measures resistance at forward current N-Channel for LED or diode evaluation. Shop now for premium quality electronic components at competitive prices with fast shipping.

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