Attribute
Description
Manufacturer Part Number
2N5457G
Manufacturer
Description
Junction Field Effect Transistors,
25V,
310mW
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | N-Channel | |
| Voltage - Breakdown (V(BR)GSS) | 25V | |
| Drain to Source Voltage (Vdss) | 25V | |
| Current - Drain (Idss) @ Vds | 1mA @ 15V | |
| Current Drain (Id) | - | |
| Voltage - Cutoff (VGS off) @ Id | 500mV @ 10nA | |
| Power - Max | 310mW | |
| Input Capacitance (Ciss) @ Vds | 7pF @ 15V | |
| Resistance - RDS(On) | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Peak Rds(on) at Id 500mV @ 10nA for MOSFET efficiency.
