Attribute
Description
Manufacturer Part Number
PMBFJ309,215
Manufacturer
Description
PMBFJ309 Series 25 Vds 50 mA N-Ch silicon field-effect Trans...
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 13.25 | ₹ 13.25 |
| 3000 | ₹ 13.25 | ₹ 39,750.00 |
| 6000 | ₹ 12.40 | ₹ 74,400.00 |
| 15000 | ₹ 11.55 | ₹ 1,73,250.00 |
| 30000 | ₹ 10.70 | ₹ 3,21,000.00 |
| 75000 | ₹ 10.22 | ₹ 7,66,500.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | N-Channel | |
| Voltage - Breakdown (V(BR)GSS) | 25V | |
| Drain to Source Voltage (Vdss) | 25V | |
| Current - Drain (Idss) @ Vds | 12mA @ 10V | |
| Current Drain (Id) | - | |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1µA | |
| Power - Max | 250mW | |
| Input Capacitance (Ciss) @ Vds | 5pF @ 10V | |
| Resistance - RDS(On) | 50 Ohm | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Peak Rds(on) at Id 1V @ 1µA for MOSFET efficiency.
