TK12Q60W,S1VQ

TK12Q60W,S1VQ

Data Sheet

Attribute
Description
Manufacturer Part Number
TK12Q60W,S1VQ
Manufacturer
Description
MOSFET N CH 600V 11.5A IPAK
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Rds On (Max) @ Id, Vgs 340 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 3.7V @ 600µA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 890pF @ 300V
Power - Max 100W
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 340 mOhm @ 5.8A, 10V for MOSFET efficiency.

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