Attribute
Description
Manufacturer Part Number
STW60N65M5
Manufacturer
Description
STW60N65M5 Series N-Channel 650 V 59 mO MDmesh? V Power Mosf...
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Stock: 1
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,215.43 | ₹ 1,215.43 |
| 5 | ₹ 1,142.55 | ₹ 5,712.75 |
| 20 | ₹ 992.04 | ₹ 19,840.80 |
| 50 | ₹ 898.32 | ₹ 44,916.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) | |
| Rds On (Max) @ Id, Vgs | 59 mOhm @ 23A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 139nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 6810pF @ 100V | |
| Power - Max | 255W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 59 mOhm @ 23A, 10V for MOSFET efficiency.
