STP19NM50N

STP19NM50N
Attribute
Description
Manufacturer Part Number
STP19NM50N
Manufacturer
Description
STP19NM50N Series N-Channel 500 V 0.25 Ohm MDmesh II Power M...
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Stock:
34

Distributor: 3

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 140.10 ₹ 140.10
10 ₹ 140.10 ₹ 1,401.00
25 ₹ 140.10 ₹ 3,502.50
50 ₹ 140.10 ₹ 7,005.00
100 ₹ 140.10 ₹ 14,010.00
500 ₹ 140.10 ₹ 70,050.00

Stock:
50

Distributor: 6

Traceability

Lead Time: Not specified


Quantity Unit Price Ext. Price
50 ₹ 199.73 ₹ 9,986.50
150 ₹ 173.23 ₹ 25,984.50
250 ₹ 163.76 ₹ 40,940.00
400 ₹ 159.98 ₹ 63,992.00

Stock:
988

Distributor: 2

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 241.50 ₹ 241.50

Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Rds On (Max) @ Id, Vgs 250 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 50V
Power - Max 110W
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 250 mOhm @ 7A, 10V for MOSFET efficiency.

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