Attribute
Description
Manufacturer Part Number
STP110N10F7
Manufacturer
Description
STP110N10F7 Series N-Channel 100 V 7 mOhm STripFET VII DeepG...
Note :
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Stock: 950
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 50 | ₹ 125.90 | ₹ 6,295.00 |
| 200 | ₹ 111.70 | ₹ 22,340.00 |
| 600 | ₹ 103.18 | ₹ 61,908.00 |
Stock: 1772
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 181.50 | ₹ 181.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) | |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 55A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 5500pF @ 50V | |
| Power - Max | 150W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 7 mOhm @ 55A, 10V for MOSFET efficiency.
