Attribute
Description
Manufacturer Part Number
STP100N10F7
Manufacturer
Description
STP100N10F7 Series N-Channel 100 V 8 mOhm STripFET VII Power...
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Stock: 50
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 50 | ₹ 128.74 | ₹ 6,437.00 |
| 200 | ₹ 114.54 | ₹ 22,908.00 |
| 600 | ₹ 106.02 | ₹ 63,612.00 |
Stock: 802
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 176.25 | ₹ 176.25 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 40A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 61nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 4369pF @ 50V | |
| Power - Max | 150W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 8 mOhm @ 40A, 10V for MOSFET efficiency.





