STI10N62K3

STI10N62K3
Attribute
Description
Manufacturer Part Number
STI10N62K3
Manufacturer
Description
MOSFET, N CH, 60V, 8.4A,...
Manufacturer Lead Time
51 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 620V
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc)
Rds On (Max) @ Id, Vgs 750 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) @ Vds 1250pF @ 50V
Power - Max 125W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 750 mOhm @ 4A, 10V for MOSFET efficiency.

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