2SK536-TB-E
Data Sheet
Attribute
Description
Manufacturer Part Number
2SK536-TB-E
Manufacturer
Description
MOSFET N-CH 50V 100MA 3CP
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 50V | |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | |
| Rds On (Max) @ Id, Vgs | 20 Ohm @ 10mA, 10V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 15pF @ 10V | |
| Power - Max | 200mW | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 20 Ohm @ 10mA, 10V for MOSFET efficiency.
