R8002ANX

R8002ANX

Data Sheet

Attribute
Description
Manufacturer Part Number
R8002ANX
Manufacturer
Description
MOSFET N-CH 800V 2A TO-220FM
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Rds On (Max) @ Id, Vgs 4.3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) @ Vgs 12.7nC @ 10V
Input Capacitance (Ciss) @ Vds 210pF @ 25V
Power - Max 35W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 4.3 Ohm @ 1A, 10V for MOSFET efficiency.

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