Attribute
Description
Manufacturer Part Number
PSMN070-200B,118
Manufacturer
Description
PSMN Series N-Channel 200 V 35 A TrenchMos Fet - TO-263-3
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 77nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 4570pF @ 25V | |
| Power - Max | 250W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 70 mOhm @ 17A, 10V for MOSFET efficiency.
