Attribute
Description
Manufacturer Part Number
SPU02N60C3
Manufacturer
Description
MOSFET N-CH 650V 1.8A IPAK
Manufacturer Lead Time
6 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) | |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.1A, 10V | |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA | |
| Gate Charge (Qg) @ Vgs | 12.5nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 200pF @ 25V | |
| Power - Max | 25W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 3 Ohm @ 1.1A, 10V for MOSFET efficiency.
