IPP60R190P6

IPP60R190P6
Attribute
Description
Manufacturer Part Number
IPP60R190P6
Description
MOSFET, N-CH, 600V, 20.2A,...
Manufacturer Lead Time
6 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20.2A
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 630µ
Gate Charge (Qg) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) @ Vds 1750pF @ 100V
Power - Max 151W
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 190 mOhm @ 7.6A, 10V for MOSFET efficiency.

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