IPP50R190CE

IPP50R190CE
Attribute
Description
Manufacturer Part Number
IPP50R190CE
Description
MOSF N CH 500V 18.5A PG-TO-220
Manufacturer Lead Time
6 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 18.5A
Rds On (Max) @ Id, Vgs 190 mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 510µA
Gate Charge (Qg) @ Vgs 6.1nC @ 10V
Input Capacitance (Ciss) @ Vds 1137pF @ 100V
Power - Max 32W
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 190 mOhm @ 6.2A, 13V for MOSFET efficiency.

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