IPD65R380E6
Data Sheet
Attribute
Description
Manufacturer Part Number
IPD65R380E6
Manufacturer
Description
MOSFET N-CH 650V 10.6A TO252
Manufacturer Lead Time
6 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 10.6A | |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.2A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA | |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 710pF @ 100V | |
| Power - Max | 83W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 380 mOhm @ 3.2A, 10V for MOSFET efficiency.
