Attribute
Description
Manufacturer Part Number
IPA60R299CP
Manufacturer
Description
MOSFET N-CH 650V 11A TO220-3
Manufacturer Lead Time
6 weeks
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
| Rds On (Max) @ Id, Vgs | 299 mOhm @ 6.6A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA | |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 100V | |
| Power - Max | 33W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 299 mOhm @ 6.6A, 10V for MOSFET efficiency.
