IPA50R199CP

IPA50R199CP
Attribute
Description
Manufacturer Part Number
IPA50R199CP
Description
MOSFET N-CH 550V 17A TO220-3
Manufacturer Lead Time
6 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Rds On (Max) @ Id, Vgs 199 mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 660µA
Gate Charge (Qg) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 100V
Power - Max 139W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 199 mOhm @ 9.9A, 10V for MOSFET efficiency.

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