Attribute
Description
Manufacturer Part Number
GA20JT12-247
Manufacturer
Description
TRANS SJT 1.2KV 20A
Note :
GST will not be applied to orders shipping outside of India
Stock: 21
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 3,638.73 | ₹ 3,638.73 |
| 25 | ₹ 3,536.50 | ₹ 88,412.50 |
| 100 | ₹ 3,179.63 | ₹ 3,17,963.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | Silicon Carbide, Normally Off | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 20A | |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 20A, 400mA | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 5W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 |
Description
Measures resistance at forward current Silicon Carbide, Normally Off for LED or diode evaluation. Peak Rds(on) at Id 70 mOhm @ 20A, 400mA for MOSFET efficiency.
