Attribute
Description
Manufacturer Part Number
NDS352AP
Manufacturer
Description
Transistor: P-MOSFET; unipolar; -30V; -900mA; SOT2
Note :
GST will not be applied to orders shipping outside of India
Stock: 12799
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 38.25 | ₹ 38.25 |
Stock: 2985
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 48.66 | ₹ 48.66 |
| 10 | ₹ 37.49 | ₹ 374.90 |
| 100 | ₹ 20.35 | ₹ 2,035.00 |
| 1000 | ₹ 15.24 | ₹ 15,240.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) | |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 3nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 135pF @ 15V | |
| Power - Max | 460mW | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 300 mOhm @ 1A, 10V for MOSFET efficiency.
