Attribute
Description
Manufacturer Part Number
FQA55N25
Manufacturer
Description
MOSFET,
N,
TO-3P; Transistor Polarity:N Channel; Continuous ...
Note :
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Stock: 282
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 396.75 | ₹ 396.75 |
Stock: 1
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 575.53 | ₹ 575.53 |
| 10 | ₹ 462.89 | ₹ 4,628.90 |
| 100 | ₹ 380.53 | ₹ 38,053.00 |
| 500 | ₹ 341.72 | ₹ 1,70,860.00 |
| 1000 | ₹ 287.77 | ₹ 2,87,770.00 |
| 2500 | ₹ 273.57 | ₹ 6,83,925.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 250V | |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) | |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 27.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 6250pF @ 25V | |
| Power - Max | 310W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 40 mOhm @ 27.5A, 10V for MOSFET efficiency.
