Attribute
Description
Manufacturer Part Number
FDS6681Z
Manufacturer
Description
MOSFET,
P; Transistor Polarity:P Channel; Continuous Drain C...
Note :
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Stock: 9222
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 134.25 | ₹ 134.25 |
Stock: 1789
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 169.44 | ₹ 169.44 |
| 10 | ₹ 136.31 | ₹ 1,363.10 |
| 100 | ₹ 108.86 | ₹ 10,886.00 |
| 500 | ₹ 95.61 | ₹ 47,805.00 |
| 1000 | ₹ 82.07 | ₹ 82,070.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) | |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 260nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 7540pF @ 15V | |
| Power - Max | 1W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 4.6 mOhm @ 20A, 10V for MOSFET efficiency.
