ZVN2110GTA
Data Sheet
Attribute
Description
Manufacturer Part Number
ZVN2110GTA
Manufacturer
Description
ZVN2110G Series 100 V 4 Ohm N-Channel Enhancement Mode Verti...
Note :
GST will not be applied to orders shipping outside of India
Stock: 18
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 54.90 | ₹ 54.90 |
| 5 | ₹ 41.65 | ₹ 208.25 |
| 25 | ₹ 36.92 | ₹ 923.00 |
| 100 | ₹ 33.13 | ₹ 3,313.00 |
| 500 | ₹ 31.24 | ₹ 15,620.00 |
Stock: 1341
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 61.50 | ₹ 61.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) | |
| Rds On (Max) @ Id, Vgs | 4 Ohm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 75pF @ 25V | |
| Power - Max | 2W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 4 Ohm @ 1A, 10V for MOSFET efficiency.
