CAS100H12AM1
Data Sheet
Attribute
Description
Manufacturer Part Number
CAS100H12AM1
Manufacturer
Description
No description available
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | 2 N-Channel (Half Bridge) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 165A | |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 20A, 20V | |
| Vgs(th) (Max) @ Id | 3.1V @ 50mA | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 9500pF @ 800V | |
| Power - Max | - | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module |
Description
Measures resistance at forward current 2 N-Channel (Half Bridge) for LED or diode evaluation. Peak Rds(on) at Id 20 mOhm @ 20A, 20V for MOSFET efficiency.
