BFG10/X,215

BFG10/X,215
Attribute
Description
Manufacturer Part Number
BFG10/X,215
Manufacturer
Description
TRANS RF NPN 2GHZ 8V SOT143
Manufacturer Lead Time
18 weeks

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Product Attributes

Type Description
Category
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 8V
Frequency - Transition 1.9GHz
Noise Figure @ f -
Gain 7dB
Power - Max 400mW
DC Current Gain (hFE) @ Ic, Vce 25 @ 50mA, 5V
Current - Collector (Ic) (Max) 250mA
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA

Description

Measures resistance at forward current 1.9GHz for LED or diode evaluation. Features a DC current gain hFE at Ic evaluated at 25 @ 50mA, 5V. Peak Vce(on) at Vge 25 @ 50mA, 5V for transistor parameters.

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