MS652S
Data Sheet
Attribute
Description
Manufacturer Part Number
MS652S
Manufacturer
Description
TRANS RF BIPO 25W 2A M123
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Voltage - Collector Emitter Breakdown (Max) | 16V | |
| Frequency - Transition | 450MHz ~ 512MHz | |
| Noise Figure @ f | - | |
| Gain | 10dB | |
| Power - Max | 25W | |
| DC Current Gain (hFE) @ Ic, Vce | 10 @ 200mA, 5V | |
| Current - Collector (Ic) (Max) | 2A | |
| Mounting Type | - | |
| Package / Case | - |
Description
Measures resistance at forward current 450MHz ~ 512MHz for LED or diode evaluation. Features a DC current gain hFE at Ic evaluated at 10 @ 200mA, 5V. Peak Vce(on) at Vge 10 @ 200mA, 5V for transistor parameters.
