MDS60L
Data Sheet
Attribute
Description
Manufacturer Part Number
MDS60L
Manufacturer
Description
TRANS RF BIPO 120W 4A 55AW1
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Voltage - Collector Emitter Breakdown (Max) | 65V | |
| Frequency - Transition | 1.03GHz ~ 1.09GHz | |
| Noise Figure @ f | - | |
| Gain | 10dB | |
| Power - Max | 120W | |
| DC Current Gain (hFE) @ Ic, Vce | 20 @ 500mA, 5V | |
| Current - Collector (Ic) (Max) | 4A | |
| Mounting Type | - | |
| Package / Case | - |
Description
Measures resistance at forward current 1.03GHz ~ 1.09GHz for LED or diode evaluation. Features a DC current gain hFE at Ic evaluated at 20 @ 500mA, 5V. Peak Vce(on) at Vge 20 @ 500mA, 5V for transistor parameters.
