NE58219-T1-A

NE58219-T1-A

Data Sheet

Attribute
Description
Manufacturer Part Number
NE58219-T1-A
Description
TRANSISTOR BIPOLAR .9GHZ 3-SMINI
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 5GHz
Noise Figure @ f -
Gain -
Power - Max 100mW
DC Current Gain (hFE) @ Ic, Vce 60 @ 5mA, 5V
Current - Collector (Ic) (Max) 60mA
Mounting Type Surface Mount
Package / Case SC-75, SOT-416

Description

Measures resistance at forward current 5GHz for LED or diode evaluation. Features a DC current gain hFE at Ic evaluated at 60 @ 5mA, 5V. Peak Vce(on) at Vge 60 @ 5mA, 5V for transistor parameters.

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